| PART |
Description |
Maker |
| BAT68-04W BAT68-05W BAT68-06W BAT68W |
Silicon Schottky Diodes (For mixer applications in the VHF/UHF range For high speed switching) SILICON, VHF-UHF BAND, MIXER DIODE
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BA283-TAP |
DIODE SILICON, VHF BAND, MIXER DIODE, DO-35, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-2, Microwave Mixer Diode
|
Vishay Semiconductors
|
| MA2C856 |
Band Switching Diodes SILICON, VHF BAND, MIXER DIODE, DO-34
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| DA6X103T |
SILICON, VHF BAND, MIXER DIODE
|
PANASONIC CORP
|
| KSC2757 KSC2757YMTF KSC2757RMTF |
Mixer Oscillator for VHF Tuner VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
NPN Epitaxial Silicon Transistor
|
Fairchild Semiconductor, Corp.
|
| DME3019-325-008 DME3013-131-012 DMJ3107-364-008 DM |
SILICON, MEDIUM BARRIER SCHOTTKY, S BAND, MIXER DIODE
SILICON, MEDIUM BARRIER SCHOTTKY, X BAND, MIXER DIODE
SILICON, HIGH BARRIER SCHOTTKY, KU BAND, MIXER DIODE
SILICON, MEDIUM BARRIER SCHOTTKY, KU BAND, MIXER DIODE
SILICON, MEDIUM BARRIER SCHOTTKY, K BAND, MIXER DIODE
SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE
SILICON, LOW BARRIER SCHOTTKY, X BAND, MIXER DIODE
SILICON, LOW BARRIER SCHOTTKY, S BAND, MIXER DIODE
|
SKYWORKS SOLUTIONS INC
|
| HSMS-8202-TR2G HSMS-8209-TR2G HSMS-8202-BLKG |
SILICON, KU BAND, MIXER DIODE
Surface Mount Microwave Schottky Mixer Diodes
|
AVAGO TECHNOLOGIES LIMITED
|
| 1N53 |
SILICON MIXER DIODE SILICON, KA BAND, MIXER DIODE, DO-36
From old datasheet system
|
Advanced Semiconductor, Inc.
|
| 1N5472A 1N5466C TX-1N5469C TX-1N5468B TX-1N5446C 1 |
VHF-UHF BAND, 47 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 18 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 27 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 22 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 100 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 68 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 20 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 6.8 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 56 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 39 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 8.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 33 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 12 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
|
| GC9943-S12-127A GC9943-S12-129A GC9941-TCC-127B GC |
SILICON, HIGH BARRIER SCHOTTKY, C BAND, MIXER DIODE
SILICON, HIGH BARRIER SCHOTTKY, KU-K BAND, MIXER DIODE
SILICON, LOW BARRIER SCHOTTKY, C BAND, MIXER DIODE
SILICON, LOW BARRIER SCHOTTKY, KU-K BAND, MIXER DIODE
SILICON, LOW BARRIER SCHOTTKY, S BAND, MIXER DIODE
|
MICROSEMI CORP-LOWELL
|
| 2SC3120 E000792 SC3120 |
TRANSISTOR (TV TUNER/ UHF MIXER/ VHF~UHF BAND RF AMPLIFIER APPLICATIONS)
TRANSISTOR (TV TUNER, UHF MIXER, VHF~UHF BAND RF AMPLIFIER APPLICATIONS)
TV TUNER, UHF MIXER APPLICATIONS VHF~UHF BAND RF AMPLIFIER APPLICATIONS
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
|
